WebApr 12, 2024 · Benchmarking State-of-the-Art ab initio Thermochemical Predictions with Accurate Pulsed-Field Ionization Photoion-Photoelectron Measurements. Lau 2006b. K. C. Lau and C. Y. Ng, Chin. J. Chem. Phys. 19, 29-38 (2006) Accurate ab initio Predictions of Ionization Energies and Heats of Formation for Cyclopropenylidene, Propargylene and ... WebSep 7, 2012 · The issue, composition dependence of glass-forming ability (GFA) in metallic glasses (MG), has been investigated by systematic experimental measurements coupled with theoretical calculations in Cu-Zr and Ni-Nb alloy systems. It is found that the atomic-level packing efficiency strongly relates to their GFA. The best GFA is located at the …
Contents: Chin. J. Chem. 1/2015 - 2015 - Wiley Online Library
WebThe Chinese Journal of Physicsis published by the Physical Society of Taiwan (TPS)(since 1963). The Chinese Journal of Physicspublishes important advances in various … WebSep 24, 2024 · Hefei National Laboratory for Physical Sciences at the Microscale and Department of Chemical Physics and Synergetic Innovation Center of Quantum Information and Quantum Physics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China, Hefei … cite tools
Chinese Journal of Chemical Physics - Wikipedia
WebCJCP reports new and original experimental and theoretical research on interdisciplinary areas with a strong chemistry and physics foundation. From the first issue of the 2013 … WebMar 15, 2024 · School of Chemistry and Materials Science, Department of Chemical Physics, Key Laboratory of Surface and Interface Chemistry and Energy Catalysis of Anhui Higher Education Institutes, University of Science and Technology of China, Hefei, Anhui 230026, China; a) Authors to whom correspondence should be addressed: [email … WebJun 4, 1998 · Electron mobilities in GaN and InN are calculated, by variational principle, as a function of temperature for carrier concentrations of 10 16, 10 17, and 10 18 cm −3 with compensation ratio as a parameter. Both GaN and InN have maximum mobilities between 100 and 200 K, depending on the electron density and compensation ratio, with lower … dianes hairdressers abergavenny